产品分类
CST2012S SOP8
CST2012S是BVDSS=20V,RDSON=8mΩ,ID=12A的N沟道快速切换mosfets。提供SOP8封装。
The CST2012S is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The CST201
The CST2012S is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The CST201
CST2012S Description/描述:
CST2012S是BVDSS=20V,RDSON=8mΩ,ID=12A的N沟道快速切换mosfets。提供SOP8封装。
The CST2012S is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The CST2012S meet the RoHS and Green Product requirement with full function reliability approved.
CST2012S Features/特性:
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench technology
CST2012S Product Summary/产品概览：
BVDSS | RDSON | ID |
20V | 8mΩ | 12.0A |
CST2012S PDFN5X6 Pin Configuration/引脚配置：
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