产品分类
CST20N10 TO252
CST20N10是BVDSS=100V,RDSON=65mΩ,ID=20A的N沟道快速切换Mosfets。提供TO252封装。
The CST20N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter appl
The CST20N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter appl
CST20N10 Description/描述:
CST20N10是BVDSS=100V,RDSON=65mΩ,ID=20A的N沟道快速切换Mosfets。提供TO252封装。
The CST20N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST20N10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST20N10 Features/特性:
Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Advanced high cell density Trench technology
CST20N10 Product Summary/产品概览：
BVDSS | RDSON | ID |
100V | 65mΩ | 20A |
CST20N10 TO252 Pin Configuration/引脚配置：
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