产品分类
AKT30P55G PDFN5X6-8L
AKT30P55G是VDS=-30V,RDSON=4.6mΩ,ID=-55A的P沟道增强Mosfet。提供PDFN5X6-8L封装。
This P Channel Trench MOSFET has been designed to low on-state resistance (RDSON),suggested use for Load Switch, PWM application Power managerment and general-purpose applications
This P Channel Trench MOSFET has been designed to low on-state resistance (RDSON),suggested use for Load Switch, PWM application Power managerment and general-purpose applications
AKT30P55G Description/描述:
AKT30P55G是VDS=-30V,RDSON=4.6mΩ,ID=-55A的P沟道增强Mosfet。提供PDFN5X6-8L封装。
This P Channel Trench MOSFET has been designed to low on-state resistance (RDSON),suggested use for Load Switch, PWM application Power managerment and general-purpose applications.
AKT30P55G Features/特性:
Advanced Trench Technology
Excellent Gate Charge × RDSON (FOM)
low on-resistance
RoHS compliant (Note 1)
Halogen-free (Note 1)
AKT30P55G Applications/应用：
Battery Protection
Load Switch
Power Management
AKT30P55G Key Performance Parameters/关键性能参数：
Parameter | Value | Unit |
VDS | -30 | V |
RDSON | max @VGS = -4.5V 4.6 | mΩ |
ID | -55 | A |
AKT30P55G Ordering Information/订购信息:
Ordering Code | Package Type | Marking Code | Form | Packing |
AKT30P55G | PDFN5X6-8L | AKT30P55G | 13 inches Reel | 5000 |
AKT30P55G TO252 Pin Configuration/引脚配置:
AKT30P55G Test Circuit and Waveform/测试电路和波形：
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