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双N-MOS

MXN3384 DFN3x3-8L

    MXN3384是VDS=20V,ID=6A,@VGS=4.5V,RDS(ON)(Typ.)=12.5m?,@VGS=3.8V,RDS(ON)(Typ.)=13m?,@VGS=2.5V,RDS(ON)(Typ.)=16.5m?的Dual N-Channe MOSFET.
    MXN3384提供DFN3x3-8L封装.
    The MXN3384 uses advanced trench technology design to provide excellent RDS(ON) with low gate charge.
    It can be used in a wide variety of applications. It is ESD protected.

    MXN3384概述:
        MXN3384是VDS=20V,ID=6A,@VGS=4.5V,RDS(ON)(Typ.)=12.5m?,@VGS=3.8V,RDS(ON)(Typ.)=13m?,@VGS=2.5V,RDS(ON)(Typ.)=16.5m?的Dual N-Channe MOSFET.
        MXN3384提供DFN3x3-8L封装.
        The MXN3384 uses advanced trench technology design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    MXN3384特性:

    VDS =20V,ID =6A
    @VGS=4.5V RDS(ON)(Typ.)=12.5m?
    @VGS=3.8V RDS(ON)(Typ.)=13m?
    @VGS=2.5V RDS(ON)(Typ.)=16.5m?
    High density cell design for ultra low Rdson
    Fully characterized Avalanche voltage and current

    MXN3384应用:

    Power switching application
    Hard Switched and High Frequency Circuits
    Uninterruptible Power Supply

    MXN3384典型应用及引脚图:

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