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双N-MOS

MXN3388L DFN3X3-8L

    MXN3388L是VDS =20V, ID =8A,RDS(ON) (Typ.)=15.5mΩ @ V GS =2.5V,RDS(ON) (Typ.)=10.6mΩ @ V GS =3.8V,RDS(ON) (Typ.)=10mΩ @ V GS =4.5V的双N沟道MOSFET,
    MXN3388L丝印MXN3388L,MXN3388L提供DFN3X3-8L 封装。
    The MXN3388L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. 
    MXN3388L概述:
        MXN3388L是VDS =20V, ID =8A,RDS(ON) (Typ.)=15.5mΩ @ V GS =2.5V,RDS(ON) (Typ.)=10.6mΩ @ V GS =3.8V,RDS(ON) (Typ.)=10mΩ @ V GS =4.5V的双N沟道MOSFET,
        MXN3388L丝印MXN3388L,MXN3388L提供DFN3X3-8L 封装。
        The MXN3388L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
      
    MXN3388L特性:
    VDS =20V, ID =8A
    RDS(ON) (Typ.)=15.5mΩ @ V GS =2.5V
    RDS(ON) (Typ.)=10.6mΩ @ V GS =3.8V
    RDS(ON) (Typ.)=10mΩ @ V GS =4.5V
    ESD Rating: 2000V HBM
    High density cell design for ultra low Rdson
    Fully characterized Avalanche voltage and current
    MXN3388L提供DFN3X3-8L 封装

    MXN3388L应用:
    Power switching application
    Hard Switched and High Frequency Circuits
    Uninterruptible Power Supply

    MXN3388L ORDERING INFORMATION:

    Part Number StorageTemperature Package Devices Per Reel
    MXN3388L -55°C to 150°C DFN3X3-8L 5000

    MXN3388L典型应用电路及封装图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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