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双N-MOS

PE2606 SOP8

    PE2606是N-Channel:VDS=20V,ID=6.8A,RDS(ON)<21mΩ@VGS=4.5V,RDS(ON)<28mΩ@VGS=2.5V;P-Channel:VDS=-20V,ID=-7A,RDS(ON)<35mΩ@VGS=-4.5V,RDS(ON)<45mΩ@VGS=-2.5V的双沟道MOSFET.
    PE2606提供SOP8封装。

    The PE2606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.

    PE2606概述:
        PE2606是N-Channel:VDS=20V,ID=6.8A,RDS(ON)<21mΩ@VGS=4.5V,RDS(ON)<28mΩ@VGS=2.5V;P-Channel:VDS=-20V,ID=-7A,RDS(ON)<35mΩ@VGS=-4.5V,RDS(ON)<45mΩ@VGS=-2.5V的双沟道MOSFET.
        PE2606提供SOP8封装。
        The PE2606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.

    PE2606特性:
    N-Channel
    VDS=20V,ID=6.8A 
    RDS(ON)<21mΩ@VGS=4.5V 
    RDS(ON)<28mΩ@VGS=2.5V 
    P-Channel
    VDS=-20V, ID = -7A 
    RDS(ON)<35mΩ@VGS=-4.5V 
    RDS(ON)<45mΩ@VGS=-2.5V 
    High Power and current handing capability 
    Lead free product is acquired 
    Surface Mount Package

    PE2606典型应用及引脚图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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