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双N-MOS

MXN30D12M PDFN3.3x3.3-8L

    MXN30D12M是VDS=30V,ID=12A,@VGS=4.5V,RDS(ON)(Typ.)=14mΩ,@VGS=2.5V,RDS(ON)(Typ.)=18mΩ的双N通道MOSFET.
    MXN30D12M提供PDFN3.3x3.3-8L封装.
    The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
    MXN30D12M概述:
        MXN30D12M是VDS=30V,ID=12A,@VGS=4.5V,RDS(ON)(Typ.)=14mΩ,@VGS=2.5V,RDS(ON)(Typ.)=18mΩ的双N通道MOSFET.
        MXN30D12M提供PDFN3.3x3.3-8L封装.
        The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
     
    MXN30D12M特性:
    VDS=30V,ID=12A
    @VGS=4.5V RDS(ON)(Typ.)=14mΩ
    @VGS=2.5V RDS(ON)(Typ.)=18mΩ
    High density cell design fo ultra low Rdson
    Fully characterized Avalanche voltage and current

    MXN30D12M应用:
    Power switching application
    Hard Switched and High Frequency
    Circuits Uninterruptible Power Supply

    MXN30D12M典型应用及引脚图:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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