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双P-MOS

MXN2283

    MXN2283是VDS=-20V,ID=3.2A,RDS(ON)=68m?,@VGS=-4.5V,RDS(ON)=95m?,@VGS=-2.5V,RDS(ON)=140m?,@VGS=-1.8V的Dual P-Channel MOSFET.

    MXN2283提供PDFN2x2-6L封装.

    The MXN2283 uses advanced trench technology and design to provide excellent RDS(ON) low gate charge and operation with gate voltages as low as 2.5V.

    This device is suitable for use as a load switch or in PWM applications.

    MXN2283概述:
        MXN2283是VDS=-20V,ID=3.2A,RDS(ON)=68m?,@VGS=-4.5V,RDS(ON)=95m?,@VGS=-2.5V,RDS(ON)=140m?,@VGS=-1.8V的Dual P-Channel MOSFET.MXN2283提供PDFN2x2-6L封装.
        The MXN2283 uses advanced trench technology and design to provide excellent RDS(ON) low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a load switch or in PWM applications.

    MXN2283特性:

    VDS =-20V,ID =3.2A
    RDS(ON) = 68 m ? @ VGS=-4.5V
    RDS(ON) = 95 m ? @ VGS=-2.5V
    RDS(ON) = 140m? @ VGS=-1.8V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    MXN2283应用:
    PWM applications
    Load switch
    Power management

    MXN2283典型应用及引脚图:


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