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MX30D10 SOP8

    MX30D10是VDS=30V,ID=10A,RDS(ON)(Typ.)11.5mΩ@Vgs=10V,RDS(ON)(Typ.)14.5mΩ@Vgs=4.5V的双N沟道MOSFET.
    MX30D10的丝印是30D10.MX30D10提供SOP-8封装.
    The MX30D10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.
    MX30D10概述:
        MX30D10是VDS=30V,ID=10A,RDS(ON)(Typ.)11.5mΩ@Vgs=10V,RDS(ON)(Typ.)14.5mΩ@Vgs=4.5V的双N沟道MOSFET.
        MX30D10的丝印是30D10.MX30D10提供SOP-8封装.
        The MX30D10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.

    MX30D10特性:
    VDS =30V,ID =10A
    RDS(ON)(Typ.)11.5m @ Vgs=10V
    RDS(ON)(Typ.)14.5m @ Vgs=4.5V
    High density cell design for ultra low Rdson
    Fully characterized Avalanche voltage and current
    MX30D10提供SOP8封装

    MX30D10应用市场:
    Power switching application
    Hard Switched and High Frequency Circuits
    Uninterruptible Power Supply

    MX30D10典型应用及引脚图:

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