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CST8205AT TSS0P8

    CST8205AT是20V6A的N沟MOSFET,RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V,丝印CST8205AT。CST8205AT提供TSS0P8封装
    The CST8205AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
    CST8205AT概述:
        CST8205AT是20V6A的N沟MOSFET,RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V,丝印CST8205AT。CST8205AT提供TSS0P8封装
        The CST8205AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

    CST8205AT特性:
    VDS=20V,ID=6A
    RDS(ON)<37mΩ@VGS=2.5V
    RDS(ON)<27mΩ@VGS=4.5V
    High Power and current handing capability 
    Lead free product is acquired
    Surface Mount Package

    CST8205AT应用
    Battery protection 
    Load switch 
    Power management

    CST8205AT典型应用电路图:

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