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PE8209HN DFN2x3-6L

    PE8209HN是VDS=18V,ID=9A,RDS(ON)<11mΩ,@VGS=4.5V,RDS(ON)<12mΩ,@VGS=3.8V,RDS(ON)<14mΩ,@VGS=3.1V RDS(ON)<16mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8209HN的丝印是8209.PE8209HN提供DFN2x3-6L封装.
    The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE8209HN概述:
        PE8209HN是VDS=18V,ID=9A,RDS(ON)<11mΩ,@VGS=4.5V,RDS(ON)<12mΩ,@VGS=3.8V,RDS(ON)<14mΩ,@VGS=3.1V RDS(ON)<16mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8209HN的丝印是8209.PE8209HN提供DFN2x3-6L封装.
        The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE8209HN特性:
    VDS = 18V, ID = 9A
    RDS(ON) < 11mΩ @VGS=4.5V
    RDS(ON) < 12mΩ@VGS=3.8V
    RDS(ON) < 14mΩ @VGS=3.1V
    RDS(ON) < 16mΩ@VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8209HN应用:
    PWM applications
    Load switch
    Power management

    PE8209HN典型应用及引脚:
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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