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PE2300 SOT23

VDS = 20V,ID = 4.5A
RDS(ON) < 40m? @ VGS=2.5V
RDS(ON) < 33m? @ VGS=4.5V
丝印：AE9T
PE2300是N沟道增强型功率MOSFET,
PE2300采用先进的沟槽技术提供,良好的RDS（ON）、低栅极电荷和栅极操作,电压低至2.5V。
PE2300采用SOT23封装。适用于电池保护或其他开关应用。

    PE2300概述
     PE2300是N沟道增强型功率MOSFET,
    PE2300采用先进的沟槽技术提供,良好的RDS（ON）、低栅极电荷和栅极操作,电压低至2.5V。
    PE2300采用SOT23封装。适用于电池保护或其他开关应用。


    PE2300特性：
    VDS = 20V,ID = 4.5A
    RDS(ON) < 40m? @ VGS=2.5V
    RDS(ON) < 33m? @ VGS=4.5V
    丝印：AE9T



    PE2300典型应用电路图和脚位和丝印
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