PES230N10K Description:
PES230N10K is an N-channel enhanced mode power MOSFET with VDS=100V, ID=50A, RDS (ON)<23m Ω @ VGS=10V, RDS (ON)<33m Ω @ VGS=4.5V. Provide TO-252-2L packaging.
The PES230N10K uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PES230N10K General Features:
VDS=100V, ID=50A
RDS(ON)<23mΩ @VGS=10V
RDS(ON)<33mΩ @VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PES230N10K Application：
High Frequency Switching
Synchronous Rectification
PES230N10K Switching Test Circuit:
PES230N10K Switching Waveform:
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