MX2319是VDS>=-18V,ID=-7A,RDS(ON)(Typ.)=17mΩ@VGS=-4.5V,RDS(ON)(Typ.)= 22mΩ@VGS=-2.5V的P沟道MOSFET.
    MX2319提供SOT23-3封装。

    The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.This device is suitable for use as a load switching application and a wide variety of other applications.

VDS >=-18V,ID=-7A

RDS(ON)(Typ.)=17mΩ@ VGS=-4.5V

RDS(ON) (Typ.)=22mΩ@VGS=-2.5V

Asvanced trench MOSFET process technology

Ultra low on-resistance with low gate charge

PWM applications

Load switch

MX2319典型应用及引脚：