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AKT30P55G PDFN5X6-8L

    AKT30P55G是VDS=-30V,RDSON=4.6mΩ,ID=-55A的P沟道增强Mosfet。提供PDFN5X6-8L封装。
    This P Channel Trench MOSFET has been designed to low on-state resistance (RDSON),suggested use for Load Switch, PWM application Power managerment and general-purpose applications.
    AKT30P55G Description/描述:
        AKT30P55G是VDS=-30V,RDSON=4.6mΩ,ID=-55A的P沟道增强Mosfet。提供PDFN5X6-8L封装。
        This P Channel Trench MOSFET has been designed to low on-state resistance (RDSON),suggested use for Load Switch, PWM application Power managerment and general-purpose applications.

    AKT30P55G Features/特性:
    Advanced Trench Technology
    Excellent Gate Charge × RDSON (FOM)
    low on-resistance
    RoHS compliant (Note 1)
    Halogen-free (Note 1)

    AKT30P55G Applications/应用:
    Battery Protection
    Load Switch
    Power Management

    AKT30P55G Key Performance Parameters/关键性能参数:
    Parameter
    Value
    Unit
    VDS
    -30
    V
    RDSON
    max @VGS = -4.5V 4.6
    ID
    -55
    A
    AKT30P55G Ordering Information/订购信息:

    Ordering Code
    Package Type
    Marking Code
    Form
    Packing
    AKT30P55G
    PDFN5X6-8L
    AKT30P55G
    13 inches Reel
    5000

    AKT30P55G TO252 Pin Configuration/引脚配置:
    AKT30P55G Test Circuit and Waveform/测试电路和波形:
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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