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N+P-MOS

CST4G03 SOT23-6

    The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
    The CST4G03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
    CST4G03 Description:
        CST4G03是N:VDS=30V,REDSON=29mΩ,ID=4A;P:VDS=-30V,REDSON=55mΩ,ID=-4A的N+P双沟道Mosfet,封装是SOT23-6。
        The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
        The CST4G03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.

    CST4G03 Features:
    Advanced high cell density Trenchtechnology
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Green Device Available

    CST4G03 Applications:
    Power management in half bridge and inverters
    DC-DC Converter
    Load Switch

    CST4G03 Product Summary:

    BVDSS
    RDSON
    ID
    30V
    29mΩ
    4A
    -30V
    55mΩ
    -4A

    CST4G03 SOT23-6L Pin Configuration:
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