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N+P-MOS

CST50G30F PDFN5060-8L

    CST50G30F是N-Ch:BVDSS=30V,RDSON=7.5mΩ,ID=45A;P-Ch:BVDSS=-30V,RDSON=8.7mΩ,ID=-45A的N+P双通道快速切换Mosfets。提供PDFN5060-8L封装。
    The CST50G30F is th high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    The CST50G30F meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
    CST50G30F Description/描述:
        CST50G30F是N-Ch:BVDSS=30V,RDSON=7.5mΩ,ID=45A;P-Ch:BVDSS=-30V,RDSON=8.7mΩ,ID=-45A的N+P双通道快速切换Mosfets。提供PDFN5060-8L封装。
        The CST50G30F is th high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST50G30F meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

    CST50G30F Features/特性:
    100% EAS Guaranteed
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST50G30F Product Summary/产品概览:
    BVDSS
    RDSON
    ID

    30V

    7.5mΩ

    45A

    -30V

    8.7

    -45A


    CST50G30F PDFN5060-8L Pin Configuration/引脚配置:

    CST50G30F Test Circuit-N/测试电路-N:



    CST50G30F Test Circuit-P/测试电路-P:



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