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单N-MOS

PE30D10

    PE30D10是VDS=30V,ID=10A,RDS(ON)<13mΩ,@VGS=10V,RDS(ON)<18mΩ,@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.

    PE30D10的丝印是30D10.PE30D10提供SOP-8封装.

    The PE30D10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30D10概述:
        PE30D10是VDS=30V,ID=10A,RDS(ON)<13mΩ,@VGS=10V,RDS(ON)<18mΩ,@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.PE30D10的丝印是30D10.PE30D10提供SOP-8封装.
        The PE30D10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30D10特性:
    VDS = 30V, ID = 10A
    RDS(ON) < 13mΩ @ VGS=10V
    RDS(ON) < 18mΩ@VGS=4.5V
    High Power and current handingcapability
    Lead free product is acquired
    Surface Mount Package

    PE30D10应用:
    PWM applications
    Load switch
    Power management

    PE30D10典型应用及引脚图:

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