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PE8312F UDFN2x2-6L

    PE8312F是VDS=30V,ID=12A,RDS(ON)<7mΩ@VGS=10V,RDS(ON)<14.5mΩ@VGS=4.5V的N沟道MOSFET。
    PE8312F的丝印是8312。PE8312F提供UDFN2x2-6L封装。
    The PE8312F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8312F概述:
        PE8312F是VDS=30V,ID=12A,RDS(ON)<7mΩ@VGS=10V,RDS(ON)<14.5mΩ@VGS=4.5V的N沟道MOSFET。
        PE8312F的丝印是8312。PE8312F提供UDFN2x2-6L封装。
        The PE8312F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8312F特性:
    VDS = 30V, ID = 12A
    RDS(ON) < 7mΩ @ VGS=10V
    RDS(ON) < 14.5mΩ@VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8312F应用:
    PWM applications
    Load switch
    Power management
    Battery Protection

    PE8312F典型应用及引脚:

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