PE8270M概述：
PE8270M是VDS=18V,ID=90A，RDS(ON)<4.2mΩ，@VGS=4.5V，RDS(ON)<4.5mΩ，@VGS=3.8V，RDS(ON)<6.5mΩ， @VGS=2.5V的N-Channel Enhancement Mode Power MOSFET
PE8270M的丝印是PE8270M.PE8270M提供PDFN3.3x3.3-8L封装.
PE8270M的丝印是PE8270M.PE8270M提供PDFN3.3x3.3-8L封装.
The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE8270M特性：
VDS = 18V, ID = 90A
RDS(ON) < 4.2mΩ @ VGS=4.5V
RDS(ON) < 4.5mΩ @ VGS=3.8V
RDS(ON) < 6.5mΩ @VGS=2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE8270M应用：
PWM applications
Load switch
PE8270M典型应用及引脚：
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