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单N-MOS

PE8270M PDFN3.3x3.3-8L

    PE8270M是VDS=18V,ID=90A,RDS(ON)<4.2mΩ,@VGS=4.5V,RDS(ON)<4.5mΩ,@VGS=3.8V,RDS(ON)<6.5mΩ, @VGS=2.5V的N-Channel Enhancement Mode Power MOSFET
    PE8270M的丝印是PE8270M.PE8270M提供PDFN3.3x3.3-8L封装.
    The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8270M概述:
        PE8270M是VDS=18V,ID=90A,RDS(ON)<4.2mΩ,@VGS=4.5V,RDS(ON)<4.5mΩ,@VGS=3.8V,RDS(ON)<6.5mΩ, @VGS=2.5V的N-Channel Enhancement Mode Power MOSFET
        PE8270M的丝印是PE8270M.PE8270M提供PDFN3.3x3.3-8L封装.
        The PE8270M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8270M特性:
    VDS = 18V, ID = 90A
    RDS(ON) < 4.2mΩ @ VGS=4.5V
    RDS(ON) < 4.5mΩ @ VGS=3.8V
    RDS(ON) < 6.5mΩ @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8270M应用:
    PWM applications
    Load switch

    PE8270M典型应用及引脚:

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