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单N-MOS

PE8262M PDFN3.3x3.3-8L

    PE8262M是VDS=20V,ID=25A,RDS(ON)<3.5mΩ,@VGS=4.5V,RDS(ON)<5.0mΩ,@VGS=2.5V,RDS(ON)<8.0mΩ,@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
    PE8262M的丝印是PE8262M.PE8262M提供PDFN3.3x3.3-8L封装.
    The PE8262M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8262M概述:
        PE8262M是VDS=20V,ID=25A,RDS(ON)<3.5mΩ,@VGS=4.5V,RDS(ON)<5.0mΩ,@VGS=2.5V,RDS(ON)<8.0mΩ,@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
        PE8262M的丝印是PE8262M.PE8262M提供PDFN3.3x3.3-8L封装.
        The PE8262M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8262M特性:
    VDS = 20V, ID = 25A
    RDS(ON) < 3.5mΩ@VGS=4.5V
    RDS(ON) < 5.0mΩ @VGS=2.5V
    RDS(ON) < 8.0mΩ@VGS=1.8V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8262M应用:
    PWM applications
    Load switch
    Battery Protection

    PE8262M典型应用及引脚:



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