服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

PE8207 SOT23-6L

    PE8207是VDS=18V,ID=4A,RDS(ON)<26mΩ,@VGS=4.5V,RDS(ON)<30mΩ,@VGS=3.8V,RDS(ON)<36mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8207的丝印是8207.
    PE8207提供SOT-23-6L封装.
    The PE8207 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8207概述:
        PE8207是VDS=18V,ID=4A,RDS(ON)<26mΩ,@VGS=4.5V,RDS(ON)<30mΩ,@VGS=3.8V,RDS(ON)<36mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8207的丝印是8207.
        PE8207提供SOT-23-6L封装.
        The PE8207 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8207特性:
    VDS = 18V, ID = 4A
    RDS(ON) < 26mΩ @ VGS=4.5V
    RDS(ON) < 30mΩ @VGS=3.8V
    RDS(ON) < 36mΩ @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8207应用:
    Battery Protection
    Load switch

    PE8207典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品