服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

PE58200PA TO-263

    PE58200PA是VDS=85V,ID=200A,RDS(ON)<3.2mΩ ,@VGS=10V的N-Channel Enhancement Mode Power MOSFET.
    PE58200PA的丝印是PE58200P.PE58200PA提供TO-263封装.
    The PE58200PA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE58200PA概述:
        PE58200PA是VDS=85V,ID=200A,RDS(ON)<3.2mΩ ,@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58200PA的丝印是PE58200P.PE58200PA提供TO-263封装.
        The PE58200PA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58200PA特性:
    VDS = 85V, ID = 200A
    RDS(ON) < 3.2mΩ  @VGS=10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58200PA应用:
    PWM applications
    Load switch
    Power management

    PE58200PA典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品