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PE6968E SOT23-6

    PE6968E是VDS=18V,ID=6A,RDS(ON)<18mΩ,@VGS=4.5V,RDS(ON)<19mΩ,@VGS=3.8V,RDS(ON)<27mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE6968E的丝印是6968E.PE6968E提供SOT-23-6L封装.
    The PE6968E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE6968E概述:
        PE6968E是VDS=18V,ID=6A,RDS(ON)<18mΩ,@VGS=4.5V,RDS(ON)<19mΩ,@VGS=3.8V,RDS(ON)<27mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE6968E的丝印是6968E.PE6968E提供SOT-23-6L封装.
        The PE6968E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE6968E特性:
    VDS = 18V, ID = 6A
    RDS(ON) < 18mΩ @ VGS=4.5V
    RDS(ON) < 19mΩ @VGS=3.8V
    RDS(ON) < 27mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE6968E应用:
    Battery Protection
    Load switch

    PE6968E典型应用及引脚:


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