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MXB6888 TO-263

    MXB6888是VDS=68V,ID=80A,RDS(ON)(Typ.)=6.8mΩ,@VGS=10V的N沟道MOSFET.
    MXB6888提供TO-263封装.
    The MXB6888 is N-channel MOS Field Effect Transistor designed for high current switching applications.
    Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

    MXB6888概述:
        MXB6888是VDS=68V,ID=80A,RDS(ON)(Typ.)=6.8mΩ,@VGS=10V的N沟道MOSFET.MXB6888提供TO-263封装.
        The MXB6888 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

    MXB6888特性:

    VDS=68V, ID=80A @ VGS=10V
    RDS(ON)(Typ.)=6.8mΩ @ VGS=10V

    Special Designed for E-Bike ControllerApplication
    Ultra Low On-Resistance
    High UIS and UIS 100% Test

    MXB6888应用:

    48V E-Bike Controller Applications
    Hard Switched and High FrequencyCircuits
    Uninterruptible Power Supply

    MXB6888典型应用及引脚图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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