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单N-MOS

MXD30N80 TO252-2L

    MXD30N80是VDS=30V,ID=80A,RDS(ON)(Typ.)4.6m,@Vgs=10V,RDS(ON)(Typ.)6m,@Vgs=4.5V的N沟道MOSFET.
    MXD30N80提供TO-252-2L封装.
    The MXD30N80 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge .
    It can be used in a wide variety of applications.

    MXD30N80概述:
        MXD30N80是VDS=30V,ID=80A,RDS(ON)(Typ.)4.6m,@Vgs=10V,RDS(ON)(Typ.)6m,@Vgs=4.5V的N沟道MOSFET.MXD30N80提供TO-252-2L封装.
        The MXD30N80 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge .It can be used in a wide variety of applications.

    MXD30N80特性:

    VDS =30V,ID =80A
    RDS(ON)(Typ.)4.6m @ Vgs=10V
    RDS(ON)(Typ.)6m @ Vgs=4.5V
    High density cell design for ultra low Rdson
    Fully characterized avalanche voltage and current
    Good stability and uniformity with high EAS
    Excellent package for good heat dissipation

    MXD30N80应用:

    Power switching application
    Hard switched and high frequency circuits
    Uninterruptible power supply

    MXD30N80典型应用及引脚:

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