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单N-MOS

MXB050N08 TO-263

    MXB050N08是VDS=85V,ID=120A,RDS(ON)(Typ.)=5.3mΩ,@VGS=10V的N沟道MOSFET.
    MXB050N08丝印是050N08.MXB050N08提供TO-263封装.
    The MXB050N08 uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    MXB050N08概述:
        MXB050N08是VDS=85V,ID=120A,RDS(ON)(Typ.)=5.3mΩ,@VGS=10V的N沟道MOSFET.MXB050N08丝印是050N08.MXB050N08提供TO-263封装.
        The MXB050N08 uses deep trench technology to provide excellent RDS(ON) and low gate
    charge. It can be used in a wide variety of applications

    MXB050N08特性:

    VDS=85V, ID=120A
    RDS(ON)(Typ.)=5.3mΩ @ VGS=10V
    High Power and current handingcapability
    Lead free product is acquired
    Surface Mount Package

    MXB050N08应用:

    Battery management
    Motor controller and driver
    UPS
    PWM applications

    MXB050N08典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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