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单N-MOS

HYG090N06LS1C2 PDFN5*6-8L

    HYG090N06LS1C2是N沟道增强型功率MOSFET
    HYG090N06LS1C2是60V/60AR的N沟MOSFET,RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V 、RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V   
    HYG090N06LS1C2丝印G090N06, 
    HYG090N06LS1C2提供PDFN5*6-8L封装。
    HYG090N06LS1C2概述:
        HYG090N06LS1C2是N沟道增强型功率MOSFET,HYG090N06LS1C2是60V/60AR的N沟MOSFET,RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V 、RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V/HYG090N06LS1C2丝印G090N06,
        HYG090N06LS1C2提供PDFN5*6-8L封装。

    HYG090N06LS1C2特性:
    60V/60A
        R DS(ON) = 7.7 mΩ(typ.)@V GS = 10V
        R DS(ON) = 11.8 mΩ(typ.)@V GS = 4.5V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen- Free Devices Available (RoHS Compliant)

    HYG090N06LS1C2应用:
    High Frequency Point-of-Load Synchronous Buck Converter
    Power Tool Application
    Networking DC-DC Power System

    HYG090N06LS1C2 ORDERING INFORMATION:

    HYG090N06LS1C2 ORDERING INFORMATION
    C2
    G090N06
    XYMXXXXXX
    Package Code
    C2: PPAK5*6-8L
    Date Code
    XYMXXXXXX

    HYG090N06LS1C2典型应用电路及封装图:

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