服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

HY4306P/B,HY4306P TO220FB-3L/HY4306B TO263-2L

    HY4306P/B是VDS=60V,ID=230A,RDS(ON)=2.6mΩ(typ.)@VGS=10V的N沟道增强型MOSFET.
    HY4306P/B,HY4306P TO220FB-3L/HY4306B TO263-2LM
 HY4306P/B提供TO-220FB-3L/TO-263-2L封装.
    HY4306P/B概术:
        HY4306P/B是VDS=60V,ID=230A,RDS(ON)=2.6mΩ(typ.)@VGS=10V的N沟道增强型MOSFET.
        HY4306P/B提供TO-220FB-3L/TO-263-2L封装.    HY4306P/B,HY4306P TO220FB-3L/HY4306B TO263-2LM HY4306P/B提供TO-220FB-3L/TO-263-2L封装.

    HY4306P/B特性:
    60V/230A
    RDS(ON)=2.6mΩ(typ.)@VGS=10V
    100% avalanche tested
    Reliable and Rugged
    Lead Free and Green DevicesAvailable(RoHS Compliant)

    HY4306P/B应用:
    Switching application
    Power Management for Inverter Systems.

    HY4306P/B典型应用电路及封装图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品