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PE60D58S SOP8

    PE60D58是VDS=60V, ID=8A,RDS(ON)<18mΩ@VGS=10V,RDS(ON)<22mΩ@VGS=4.5V的N沟道MOSFET.
    PE60D58提供SOP8封装.
    The PE60D58S uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE60D58S Description:
        PE60D58是VDS=60V, ID=8A,RDS(ON)<18mΩ@VGS=10V,RDS(ON)<22mΩ@VGS=4.5V的N沟道MOSFET.PE60D58提供SOP8封装.
        The PE60D58S uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE60D58S General Features:
    VDS = 60V, I D=8A
    RDS(ON) < 18mΩ @ V GS =10V
    RDS(ON) < 22mΩ @ V GS =4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE60D58S  Application
    PWM applications
    Load switch
    Power management

    PE60D58S典型应用及引脚图:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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