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单N-MOS

CST60N02 TO252-4R

    CST60N02是BVDSS/20V,RDSON=4.7mΩ,ID=60A的N沟道Mosfet,提供TO252-4R封装.
    CST60N02 Description:
        
    CST60N02是BVDSS/20V,RDSON=4.7mΩ,ID=60A的N沟道Mosfet,提供TO252-4R封装.
        The CST60N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck
    converter applications.
        The CST60N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

    CST60N02 Features
    100% EAS Guaranteed
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trenchtechnology

    CST60N02 Product Summary
    BVDSS
    RDSON
    ID
    20V
    4.7 mΩ
    60A
    CST60N02 TO252 Pin Configuration

    CST60N02 Package M echanical Data TO 252 4R

    CST60N02 Reel Spectification-TO-252-4R
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