服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

PE5890K TO-252-2L

    PE5890K是VDS=85V, ID=90A,RDS(ON)<6mΩ@VGS=10V的N通道增强模式电源Mosfet。提供TO-252-2L封装。
    The PE5890K uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE5890K Description/概述:
        PE5890K是VDS=85V, ID=90A,RDS(ON)<6mΩ@VGS=10V的N通道增强模式电源Mosfet。提供TO-252-2L封装。
        The PE5890K uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE5890K General Features/一般特征:
    VDS=85V, ID=90A
    RDS(ON)<6mΩ@VGS=10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE5890K Application/应用:
    PWM applications
    Load switch
    Power management


    PE5890K Typical Electrical and Thermal Characteristics:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品