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CST30N03BD PDFN3333-8L

    CST30N03BD是BVDSS=30V,RDSON=9.5mΩ,ID=25A的N沟道快速切换mosfets。提供PDFN3333-8L封装。
    The CST30N03BD is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    The CST30N03BD meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
    CST30N03BD Description/描述:
        CST30N03BD是BVDSS=30V,RDSON=9.5mΩ,ID=25A的N沟道快速切换mosfets。提供PDFN3333-8L封装。
        The CST30N03BD is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST30N03BD meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.    

    CST30N03BD Features/特性:
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST30N03BD Product Summary/产品概览:
    BVDSS
    RDSON
    ID

    30V

    9.5mΩ

    25A


    CST30N03BD PDFN3333-8L Pin Configuration/引脚配置:

    CST30N03BD Test Circuit/测试电路:


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