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单N-MOS

CST30N10 TO252

    CST30N10是BVDSS=100V,RDSON=32mΩ,ID=30A的N沟道快速切换Mosfets。提供TO252封装。
    The CST30N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
    The CST30N10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
    CST30N10 Description/描述:
        CST30N10是BVDSS=100V,RDSON=32mΩ,ID=30A的N沟道快速切换Mosfets。提供TO252封装。
        The CST30N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
        The CST30N10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

    CST30N10 Features/特性:
    Super Low Gate Charge
    Green Device Available
    Excellent Cdv/dt effect decline
    Advanced high cell density Trench technology

    CST30N10 Product Summary/产品概览:
    BVDSS
    RDSON
    ID

    100V

    32

    30A


    CST30N10 TO252 Pin Configuration/引脚配置:

    CST30N10 Package Size/封装尺寸:


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