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单N-MOS

PE8680K TO252-2L

    PE8680K是VDS=60V,ID=80A,RDS(ON)<10.5mΩ @VGS=10V的N沟道MOSFET。
    PE8680K的丝印是PE8680K,PE8680K提供TO-252-2L封装。
    The PE8680K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
    PE8680K概述:
        PE8680K是VDS=60V,ID=80A,RDS(ON)<10.5mΩ @VGS=10V的N沟道MOSFET。
        PE8680K的丝印是PE8680K,PE8680K提供TO-252-2L封装。
        The PE8680K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

    PE8680K特性:
    VDS=60V, ID =80A 
    RDS(ON) <10.5mΩ  @ VGS=10V
    Advanced trench MOS technology
    Extremely low on-resistance RDS(ON)
    Excellent Qg x RDS(ON) product(FOM)
    Qualified according to JEDEC criteria

    PE8680K应用:
    Motor control and drive
    Battery management
    UPS(uninterruptible power supply)

    PE8680K典型应用及引脚:


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