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PE8612K TO252-2L

    PE8612K是VDS=60V,ID=12A,RDS(ON)<70mΩ @VGS=10V,RDS(ON)<80mΩ @VGS=4.5V的N沟道MOSFET。
    PE8612K的丝印是PE8612K,PE8612K提供TO252-2L封装。
    The PE8612K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8612K概述:
        PE8612K是VDS=60V,ID=12A,RDS(ON)<70mΩ @VGS=10V,RDS(ON)<80mΩ @VGS=4.5V的N沟道MOSFET。
        PE8612K的丝印是PE8612K,PE8612K提供TO252-2L封装。
        The PE8612K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8612K特性:
    VDS = 60V, ID = 12A
    RDS(ON) < 70mΩ @ VGS=10V
    RDS(ON) < 80mΩ  @ VGS=4.5V
    High Power and current handingcapability
    Lead free product is acquired
    Surface Mount Package

    PE8612K应用:
    PWM applications
    Load switch
    Power management

    PE8612K典型应用及引脚:

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