服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

PE8318M PDFN3.3x3.3-8L

    PE8318M是VDS=30V,ID=18A,RDS(ON)<21mΩ@VGS=10V,RDS(ON)<32mΩ@VGS=4.5V的N沟道MOSFET。
    PE8318M的丝印是PE8318M。PE8318M提供PDFN3.3x3.3-8L封装。
    The PE8318M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8318M概述:
        PE8318M是VDS=30V,ID=18A,RDS(ON)<21mΩ@VGS=10V,RDS(ON)<32mΩ@VGS=4.5V的N沟道MOSFET。
        PE8318M的丝印是PE8318M。PE8318M提供PDFN3.3x3.3-8L封装。
        The PE8318M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8318M特性:
    VDS = 30V, ID = 18A 
    RDS(ON) < 21mΩ @ VGS=10V 
    RDS(ON) < 32mΩ@VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired 
    Surface Mount Package

    PE8318M应用:
    PWM applications
    Load switch
    Power management

    PE8318M典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品