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单N-MOS

AKT2055Q

20V N-channel enhancement mode MOSFET

Features:
Extremely Low RDS(on):
    Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A
Good stability and uniformity
100% avalanche tested
Excellent package for good heat dissipation
    AKT2055Q General Description:
        The AKT2055Q uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application,Power management and general purpose applications.

    AKT2055Q Features:
    Extremely Low RDS(on):
        Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A
    Good stability and uniformity
    100% avalanche tested
    Excellent package for good heat dissipation

    AKT2055Q Schematic:




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