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单N-MOS

HYG053N10NS1D/U/V

100V/95A
RDS(ON)=5.2mΩ(typ.)@VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Halogen-Free Devices Available(RoHS Compliant)
    HYG053N10NS1D/U/V Description:
        HYG053N10NS1D/U/V是VDS=100V,ID=95A,RDS(ON)=5.2mΩ(typ.)@VGS=10V的N沟道MOSFET.

    HYG053N10NS1D/U/V Feature:
    100V/95A
    RDS(ON)=5.2mΩ(typ.)@VGS = 10V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen-Free Devices Available(RoHS Compliant)

    HYG053N10NS1D/U/V Applications:
    Switching Application
    Motor control and drive
    Battery management

    HYG053N10NS1D/U/V Pin Description:
    HYG053N10NS1D/U/V Avalanche Test Circuit:
    HYG053N10NS1D/U/V Switching Time Test Circuit:
    HYG053N10NS1D/U/V Gate Charge Test Circuit:
    HYG053N10NS1D/U/V Device Per Unit:
    Package Type Unit Quantity
    TO-252-2L Tube 75
    TO-252-2L Reel 2500
    TO-251-3L Tube 75
    TO-251-3S Tube 75
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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