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MX8203

    MX8203是VDS=20V,ID=6A,RDS(ON)(Typ.)16m,@VGS=4.5V,RDS(ON)(Typ.)21m,@VGS=2.5V的N沟道MOSFET.

    MX8203提供SOT23-6封装.

    The MX8203 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

    This device is suitable for use as a Battery protection or in other Switching applications.

    MX8203概述:
        MX8203是VDS=20V,ID=6A,RDS(ON)(Typ.)16m,@VGS=4.5V,RDS(ON)(Typ.)21m,@VGS=2.5V的N沟道MOSFET.
        MX8203提供SOT23-6封装.
        The MX8203 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
        This device is suitable for use as a Battery protection or in other Switching applications.

    MX8203特性:

    VDS = 20V,ID =6A
    RDS(ON) (Typ.) 16m @ VGS=4.5V
    RDS(ON) (Typ.) 21m @ VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    MX8203应用:

    Battery protection
    Load switch
    Power management

    MX8203典型应用及引脚图:

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