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单N-MOS

MXD3080K

    These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

    These devices are well suited for high efficiency fast switching applications.
    MXD3080K Description:
        These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
        These devices are well suited for high efficiency fast switching applications.

    MXD3080K Features:
    VDS=30V, ID=80A
    RDS(ON)(Typ.)=3.7mΩ@VGS=10V
    RDS(ON)(Typ.)=6mΩ@VGS=4.5V
    Improved dv/dt capability
    100% EAS Guaranteed
    Fast switching

    MXD3080K Application:
    NB / VGA / VCORE
    POL Applications
    SMPS 2nd SR

    MXD3080K Pinout:

    MXD3080K Ordering Information:
    Part Number
    StorageTemperature
    Package
    Devices Per Reel
    MXD3080K
    -55°C to 150°C
    TO-252
    -


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