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MXN035N02

     MXN035N02是VDS=20V, ID=56A,RDS(ON)(Typ.)=4.7mΩ@VGS=2.5V,RDS(ON)(Typ.)=3.5mΩ@VGS=4.5V的N沟道MOSFET.

    MXN035N02的丝印是035N02.MXN035N02提供DFN5*6-8L封装.

    The MXN035N02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications.
    MXN035N02概述:
         MXN035N02是VDS=20V, ID=56A,RDS(ON)(Typ.)=4.7mΩ@VGS=2.5V,RDS(ON)(Typ.)=3.5mΩ@VGS=4.5V的N沟道MOSFET.MXN035N02的丝印是035N02.MXN035N02提供DFN5*6-8L封装.
        The MXN035N02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications.

    MXN035N02特性:
    VDS=20V, ID=56A
    RDS(ON)(Typ.)=4.7mΩ @ VGS=2.5V
    RDS(ON)(Typ.)=3.5mΩ @ VGS=4.5V
    High Power and current handing capability 
    Lead free product is acquired
    Surface Mount Package

    MXN035N02应用:
    Battery Protection
    Load switch
    Power management

    MXN035N02订购信息:

    Device

    Marking

    StorageTemperature

    Package

    Devices Per Reel

    MXN035N02

    035N02

    -55°C to 150°C

    DFN5X6-8L

    2500


    MXN035N02典型应用及管脚图:

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