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PE2012T

    PE2012T是VDS=18V,ID=12A,RDS(ON)<11mΩ,@VGS=4.5V,RDS(ON)<12mΩ,@VGS=3.8VRDS(ON)<13mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

    PE2012T提供TSSOP-8封装.

    The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE2012T概述:
        PE2012T是VDS=18V,ID=12A,RDS(ON)<11mΩ,@VGS=4.5V,RDS(ON)<12mΩ,@VGS=3.8VRDS(ON)<13mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE2012T提供TSSOP-8封装.
        The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE2012T特性:

    VDS = 18V, ID = 12A
    RDS(ON) < 11mΩ @ VGS=4.5V
    RDS(ON) < 12mΩ@VGS=3.8V
    RDS(ON) < 13mΩ @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE2012T应用:

    Battery Protection
    Load switch

    PE2012T典型应用及引脚图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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