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单N-MOS

PE30100K

    PE30100K是VDS=30V,ID=100A,RDS(ON)<5.5mΩ,@VGS=10V,RDS(ON)<7mΩ,@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.

    PE30100K的丝印是30100K.PE30100K提供TO-252-2L封装.
 
  The PE30100K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30100K概述:
        PE30100K是VDS=30V,ID=100A,RDS(ON)<5.5mΩ,@VGS=10V,RDS(ON)<7mΩ,@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.
        PE30100K的丝印是30100K.PE30100K提供TO-252-2L封装.
        The PE30100K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30100K特性:
    VDS = 30V, ID = 100A
    RDS(ON) < 5.5mΩ @ VGS=10V
    RDS(ON) < 7mΩ @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE30100K应用:
    Battery management
    Motor controller and driver
    PWM applications
    Load switch

    PE30100K典型应用及引脚图:

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