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PE3050K

    PE3050K是VDS=30V,ID=50A,RDS(ON)<8.5mΩ,@VGS=10V,RDS(ON)<14mΩ,@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.

    PE3050K的丝印是3050K.PE3050K提供TO-252-2L封装.

    The PE3050K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE3050K概述:
        PE3050K是VDS=30V,ID=50A,RDS(ON)<8.5mΩ,@VGS=10V,RDS(ON)<14mΩ,@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.PE3050K的丝印是3050K.PE3050K提供TO-252-2L封装.
        The PE3050K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE3050K特性:
    VDS = 30V, ID = 50A
    RDS(ON) < 8.5mΩ @ VGS=10V
    RDS(ON) < 14mΩ@VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE3050K应用:
    Battery management
    Motor controller and driver
    PWM applications
    Load switch

    PE3050K典型应用及引脚图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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