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单N-MOS

PE30D04

    PE30D04是VDS=30V,ID=6A,RDS(ON)<24mΩ,@VGS=10V,RDS(ON)<34mΩ,@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.

    PE30D04的丝印是30D04.PE30D04提供SOP-8封装.

    The PE30D04 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE30D04概述:
        PE30D04是VDS=30V,ID=6A,RDS(ON)<24mΩ,@VGS=10V,RDS(ON)<34mΩ,@VGS=4.5V的N-Channel Enhancement Mode Power MOSFET.PE30D04的丝印是30D04.PE30D04提供SOP-8封装.
        The PE30D04 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE30D04特性:
    VDS = 30V, ID=6A
    RDS(ON) < 24mΩ @ VGS=10V
    RDS(ON) < 34mΩ @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE30D04应用:
    PWM applications
    Load switch
    Power management
    Battery Protection

    PE30D04典型应用及引脚图:


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