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单N-MOS

PE58200P

    PE58200P是VDS=85V,ID=200A,RDS(ON)<3.2mΩ ,@VGS=10V的N-Channel Enhancement Mode Power MOSFET.

    PE58200P提丝印是PE58200P.PE58200P提供TO-263封装.

    The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE58200P概述:
        PE58200P是VDS=85V,ID=200A,RDS(ON)<3.2mΩ ,@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58200P提丝印是PE58200P.PE58200P提供TO-263封装.
        The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58200P特性:
    VDS = 85V, ID = 200A
    RDS(ON) < 3.2mΩ  @VGS=10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58200P应用:
    PWM applications
    Load switch
    Power management

    PE58200P典型应用及引脚:

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