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PE8107Z0

    PE8107Z0是VDS=18V,ID=7A,RDS(ON)<15mΩ,@VGS=4.5V,RDS(ON)<17mΩ,@VGS=4V,RDS(ON)<18mΩ,@VGS=3.1V,RDS(ON)<20mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

    PE8107Z0的丝印是8107.PE8107Z0提供PDFN2x5-6L封装.

    The PE8107Z0 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE8107Z0概述:
        PE8107Z0是VDS=18V,ID=7A,RDS(ON)<15mΩ,@VGS=4.5V,RDS(ON)<17mΩ,@VGS=4V,RDS(ON)<18mΩ,@VGS=3.1V,RDS(ON)<20mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8107Z0的丝印是8107.PE8107Z0提供PDFN2x5-6L封装.
        The PE8107Z0 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE8107Z0特性:
    VDS = 18V, ID = 7A
    RDS(ON) < 15mΩ @ VGS=4.5V
    RDS(ON) < 17mΩ @VGS=4V
    RDS(ON) < 18mΩ @VGS=3.1V
    RDS(ON) < 20mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8107Z0应用:
    PWM applications
    Load switch
    Power management

    PE8107Z0典型应用及引脚:

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