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单N-MOS

PE8207C

    PE8207C是VDS=18V,ID=7A,RDS(ON)<14mΩ,@VGS=4.5V,RDS(ON)<16mΩ,@VGS=3.8V,RDS(ON)<20mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

    PE8207C的丝印是8207C.PE8207C提供SOT-23-3L封装.

    The PE8207C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8207C概述:
        PE8207C是VDS=18V,ID=7A,RDS(ON)<14mΩ,@VGS=4.5V,RDS(ON)<16mΩ,@VGS=3.8V,RDS(ON)<20mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8207C的丝印是8207C.PE8207C提供SOT-23-3L封装.
        The PE8207C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8207C特性:
    VDS = 18V, ID = 7A
    RDS(ON) < 14mΩ @ VGS=4.5V
    RDS(ON) < 16mΩ@VGS=3.8V
    RDS(ON) < 20mΩ@VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8207C应用:
    Battery Protection
    Load switch
    Power management

    PE8207C典型应用及引脚:

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