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单N-MOS

PE8250K

    PE8250K是VDS=20V,ID=50A,RDS(ON)<6mΩ,@VGS=4.5V,RDS(ON)<8mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

    PE8250K的丝印是PE8250K.PE8250K提供TO-252-2L封装.

    The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8250K概述:
        PE8250K是VDS=20V,ID=50A,RDS(ON)<6mΩ,@VGS=4.5V,RDS(ON)<8mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8250K的丝印是PE8250K.PE8250K提供TO-252-2L封装.
        The PE8250K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8250K特性:
    VDS = 20V, ID = 50A
    RDS(ON) < 6mΩ @ VGS=4.5V
    RDS(ON) < 8mΩ @ VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8250K应用:
    PWM applications
    Load switch

    PE8250K典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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